BL Galaxy Electrical Production specification
NPN Silicon Epitaxial Planar Transistor MMBT1616A
FEATURES
Pb
z Audio frequency power amplifier.
z Medium speed switching.
APPLICATIONS
z General purpose application, switching application.
SOT-23
ORDERING INFORMATION
Type No. Marking Package Code
MMBT1616A 16A SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage 120 V
Lead-free
V
CEO
V
EBO
I
C
P
C
Tj,T
stg
Collector-Emitter Voltage 60 V
Emitter-Base Voltage 6 V
Collector Current –Continuous DC
Pulse width≤10ms
Collector Power Dissipation 350 mW
Junction and Storage Temperature -55~150
1
2
A
℃
Document number: BL/SSSTC070 www.galaxycn.com
Rev.A 1
BL Galaxy Electrical Production specification
NPN Silicon Epitaxial Planar Transistor MMBT1616A
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter Symbol Test conditions MIN
Collector-base breakdown voltage
V
(BR)CBO IC
=100μA,IE=0 120 V
TYP MAX UNIT
Collector-emitter breakdown
voltage
Emitter-base breakdown voltage V
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter on voltage
Transition frequency
Collector output capacitance
Turn on time
Fall time
Storage time
CLASSIFICATION OF h
FE1
V
I
CBO
I
EBO
h
FE
V
V
V
f
T
C
t
on
t
f
t
s
IC=1mA,IB=0 60 V
(BR)CEO
IE=100μA,IC=0 6
(BR)EBO
V
VCB=60V,IE=0 0.1 μA
VEB=6V,IC=0 0.1 μA
CE(sat)
BE(sat)
BE(on)
ob
VCE=2V,IC=100mA
=2V, IC=1A
V
CE
IC=1A, IB=50mA
IC=1A, IB=50mA
VCE=2V, IC=50mA
VCE=2V, IC= 100mA
VCB=10V,IE=0,f=1MHz
VCE=10V,IC=100mA
V
=2-3V
BE(off)
IB1=IB2=10mA
135
81
0.15 0.3 V
0.9 1.2 V
0.6 0.64 0.7 V
100 160 MHz
19 pF
0.07 μS
0.07 μS
0.95 μS
600
RANK Y G L
h
FE1
135-270 200-400 300-600
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Document number: BL/SSSTC070 www.galaxycn.com
Rev.A 2
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