BL Galaxy Electrical MMBD4448HADW, MMBD4448HAQW, MMBD4448HCDW, MMBD4448HCQW, MMBD4448HSDW Schematic [ru]
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BL Galaxy Electrical Production specification
Surface Mount Fast Switching Diodes
MMBD4448HCQW/AQW/ADW/CDW/SDW/TW
FEATURES
z High conductance.
z Fast switching speed.
Pb
Lead-free
z Ultra-small surface mount package.
z For general purpose switching application.
MMBD4448HCQW MMBD4448HAQW MMBD4448HADW
APPLICATIONS
z High speed switching application. MMBD4448HCDW MMBD4448HSDW MMBD4448HTW
SOT-363
ORDERING INFORMATION
Type No. Marking Package Code
MMBD4448HCQW KA4 SOT-363
MMBD4448HAQW KA5 SOT-363
MMBD4448HADW KA6 SOT-363
MMBD4448HCDW KA7 SOT-363
MMBD4448HSDW KAB SOT-363
MMBD4448HTW KAA SOT-363
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol Characteristic Value Unit
V
RM
V
RRM
V
RWM
V
R
V
R(RMS)
I
FM
I
O
I
FSM
P
D
R
θJA
Tj,T
stg
Document number: BL/SSSDE022 www.galaxycn.com
Rev.A 1
Non-Repetitive peak reverse voltage 100 V
Repetitive peak reverse Voltage
Working peak reverse voltage
DC reverse voltage
RMS Reverse voltage 57 V
Forward continuous current 500 mA
Average rectified output current 250 mA
Forward surge current @t=1.0μs
@t=1.0s
Power Dissipation 200 mW
Thermal resistance,Junction to ambient air 625
Junction and Storage Temperature -65 to+150
80 V
4.0
2.0
A
℃/W
℃
BL Galaxy Electrical Production specification
Surface Mount Fast Switching Diodes
MMBD4448HCQW/AQW/ADW/CDW/SDW/TW
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter Symbol Test conditions MIN MAX UNIT
Reverse breakdown voltage V
Average reverse current IR
Forward voltage V
Total Capacitance C
Reverse Recovery time t
(BR)R
F
T
rr
IR=100μA 80 - V
V
=70V
R
VR=75V，Tj=150℃
V
=25V，Tj=150℃
R
V
=20V
R
IF=5.0mA
I
=10mA
F
I
=100mA
F
I
=150mA
F
VR=6V,f=1.0MHz - 3.5 pF
IF=5mA, VR=6V - 4.0 ns
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
-
-
-
-
0.62
-
-
-
100
50
30
25
0.72
0.855
1.0
1.25
nA
uA
uA
nA
V
Document number: BL/SSSDE022 www.galaxycn.com
Rev.A 2
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