BL Galaxy Electrical Production specification
Silicon Epitaxial Planar Transistor M8550
FEATURES
Pb
z High Collector Current.(IC= -800mA）
z Complementary To M8050.
z Excellent H
Linearity.
FE
APPLICATIONS
z High Collector Current.
SOT-23
ORDERING INFORMATION
Type No. Marking Package Code
M8550 Y21 SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj,T
stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction and Storage Temperature
Lead-free
-40 V
-25 V
-6 V
-800 mA
200 mW
-55~150 ℃
Document number: BL/SSSTC153 www.galaxycn.com
Rev.A 1
BL Galaxy Electrical Production specification
Silicon Epitaxial Planar Transistor M8550
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter Symbol Test conditions MIN
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage V
Collector cut-off current
Collector cut-off current
V
(BR)CBO IC
V
I
CBO
I
CEO
IC=-0.1mA,IB=0 -25 V
(BR)CEO
IE=-100μA,IC=0 -6
(BR)EBO
=-100μA,IE=0 -40 V
VCB=-35V,IE=0 -0.1 μA
VCE=-20V,IB=0 -0.1 μA
MAX UNIT
V
VCE=-1V,IC=-5mA 45
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
h
FE
V
CE(sat)
V
BE(sat)
f
T
VCE=-1V,IC=-100mA 85 300
=-1V,IC=-800mA
V
CE
IC=-800 mA, IB=-80mA
=-800 mA, IB=-80mA
I
C
40
-0.5 V
-1.2 V
VCE=-6V, IC= -20mA
f=30MHz
150 MHz
CLASSIFICATION OF h
Rank L H
Range
FE(1)
85-200 200-300
Document number: BL/SSSTC153 www.galaxycn.com
Rev.A 2
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