BL Galaxy Electrical Production specification
Silicon Epitaxial Planar Transistor M8050
FEATURES
z High Collector Current.(IC= 800mA).
z Complementary To M8550.
z Excellent HFE Linearity.
Pb
Lead-free
z High total power dissipation.(P
=200mW)
C
APPLICATIONS
z High Collector Current.
SOT-23
ORDERING INFORMATION
Type No. Marking Package Code
M8050 Y11 SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol Parameter Value Units
V
V
CBO
CEO
Collector-Base Voltage
Collector-Emitter Voltage
40 V
25 V
V
EBO
I
C
P
C
Tj,T
stg
Document number: BL/SSSTC152 www.galaxycn.com
Rev.A 1
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction and Storage Temperature
6 V
800 mA
200 mW
-55~150 ℃
BL Galaxy Electrical Production specification
Silicon Epitaxial Planar Transistor M8050
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V
Collector-emitter breakdown voltage V
Emitter-base breakdown voltage V
Collector cut-off current I
Collector cut-off current I
DC current gain h
Collector-emitter saturation voltage V
Base-emitter saturation voltage V
Transition frequency f
(BR)CBO IC
(BR)CEO
(BR)EBO
CBO
CEO
FE
CE(sat)
IC=800mA, IB=80mA 1.2 V
BE(sat)
T
=100μA,IE=0 40 V
IC=0.1mA,IB=0 25 V
IE=100μA,IC=0 6 V
VCB=35V,IE=0 0.1 μA
VCE=20V,IB=0 0.1 μA
VCE=1V,IC=5mA
V
=1V,IC=100mA
CE
V
=1V,IC=800mA
CE
45
80
40
300
IC=800mA, IB=80mA 0.5 V
VCE=6V, IC= 20mA
f=30MHz
150 MHz
CLASSIFICATION OF h
FE(1)
Rank L H
Range 80-200 200-300
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Document number: BL/SSSTC152 www.galaxycn.com
Rev.A 2
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