BL Galaxy Electrical Production specification
NPN Silicon Epitaxial Planar Transistor M28S
FEATURES
Pb
z Excellent HFE Linearity.
z High DC current gain.
APPLICATIONS
z General purpose application, switching application.
SOT-23
ORDERING INFORMATION
Type No. Marking Package Code
M28S 28S SOT-23
MAXIMUM RATING
@ Ta=25℃ unless otherwise specified
Lead-free
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj,T
stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction and Storage Temperature
40 V
20 V
6 V
1000 mA
200 mW
-55~150 ℃
Document number: BL/SSSTC058 www.galaxycn.com
Rev.A 1
BL Galaxy Electrical Production specification
NPN Silicon Epitaxial Planar Transistor M28S
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter Symbol Test conditions MIN
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage V
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
V
(BR)CBO IC
V
I
CBO
I
EBO
h
FE
V
IC=1mA,IB=0 20 V
(BR)CEO
IE=100μA,IC=0 6
(BR)EBO
CE(sat)
=100μA,IE=0 40 V
VCB=35V,IE=0 0.1 μA
VEB=5V,IC=0 0.1 μA
VCE=1V,IC=1mA
=1V,IC=0.1A
V
CE
=1V,IC=0.3A
V
CE
=1V,IC=0.5A
V
CE
IC=600mA, IB=20mA
290
300
300
300
0.55 V
TYP MAX UNIT
V
1000
Transition frequency
Collector output capacitance
CLASSIFICATION OF h
Rank B C D
Range 300-550 500-700 650-1000
f
T
C
ob
FE2
VCE=10V, IC=50mA
VCB=10V,IE=0,f=1MHz
100 MHz
9 pF
Document number: BL/SSSTC058 www.galaxycn.com
Rev.A 2
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