BL Galaxy Electrical Production specification
NPN Silicon Epitaxial Planar Transistor KTD1304
FEATURES
Pb
z High emitter-base voltage.
z High reverse h
z Low on resistance.
FE
.
APPLICATIONS
z Audio muting application.
SOT-23
ORDERING INFORMATION
Type No. Marking Package Code
KTD1304 MAX SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol Parameter Value Units
Lead-free
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj,T
stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Base Current
Collector Power Dissipation
Junction and Storage Temperature
25 V
20 V
12 V
300 mA
30 mA
200 mW
-55~150 ℃
Document number: BL/SSSTC113 www.galaxycn.com
Rev.A 1
BL Galaxy Electrical Production specification
NPN Silicon Epitaxial Planar Transistor KTD1304
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter Symbol Test conditions MIN
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage V
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
V
(BR)CBO IC
V
I
CBO
I
EBO
h
FE
V
V
f
T
IC=1mA,IB=0 20 V
(BR)CEO
IE=100μA,IC=0 12
(BR)EBO
CE(sat)
BE(sat)
=100μA,IE=0 25 V
VCB=25V,IE=0 0.1 μA
VEB=12V,IC=0 0.1 μA
VCE=2V,IC=4mA 200 800
IC=100mA, IB=10mA
IC=100mA, IB=10mA
VCE=10V, IC= 1mA
0.25 V
1 V
60 MHz
TYP MAX UNIT
V
Collector output capacitance
C
ob
VCB=10V,IE=0,f=1MHz
10 pF
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Document number: BL/SSSTC113 www.galaxycn.com
Rev.A 2
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