BL Galaxy Electrical Production specification
Epitaxial Planar NPN Transistor KTC4375
FEATURES
Pb
z PC=1W(Mounted on ceramic substrate).
z Small flat package.
z Complementary: KTA1663.
SOT-89
ORDERING INFORMATION
Type No. Marking Package Code
KTC4375 GO/GY SOT-89
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol Parameter Value Units
Lead-free
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
P
C*
Tj,T
stg
*:
P
KTC4375mounted on ceramic substrate(250mm2x0.8t)
C
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Base current
Collector Power Dissipation
Junction and Storage Temperature
30 V
30 V
5 V
1.5 A
0.3 A
500 mW
1 W
-55~150 ℃
Document number: BL/SSSTG034 www.galaxycn.com
Rev.A 1
BL Galaxy Electrical Production specification
Epitaxial Planar NPN Transistor KTC4375
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter Symbol Test conditions MIN
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage V
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
CLASSIFICATION OF h
Rank O Y
Range 100-200 160-320
V
(BR)CBO IC
V
I
CBO
I
EBO
h
FE
V
V
f
T
C
FE(1)
IC=10mA,IB=0 30 V
(BR)CEO
IE=1mA,IC=0 5
(BR)EBO
CE(sat)
BE
ob
=1mA,IE=0 30 V
VCB=30V,IE=0 100 nA
VEB=5V,IC=0 100 nA
VCE=2V,IC=500mA 100 320
IC=1.5A, IB= 0.03A
=2V, IB= 500mA
V
CE
VCE=2V, IC= 500mA
VCB=10V,IE=0,f=1MHz
2.0 V
1.0 V
120 MHz
40 pF
TYP MAX UNIT
V
MARKING GO GY
Document number: BL/SSSTG034 www.galaxycn.com
Rev.A 2
Loading...