BL Galaxy Electrical Production specification
NPN Silicon Epitaxial Planar Transistor KTC4373
FEATURES
Pb
z High transition frequency:V
z High voltage:V
z P
z Small flat package.
z Complementary: KTA1661.
=1W(Mounted on ceramic substrate).
C
=0.5V(Max).
CE(sat)
APPLICATIONS
z Power amplifier application. SOT-89
z Power switching application.
ORDERING INFORMATION
Type No. Marking Package Code
KTC4373 CO/CY SOT-89
=120V.
CEO
Lead-free
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj,T
stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Base current
Collector Dissipation
Junction and Storage Temperature
120 V
120 V
5 V
800 mA
160 mA
500 mW
-55~150 ℃
Document number: BL/SSSTG014 www.galaxycn.com
Rev.A 1
BL Galaxy Electrical Production specification
NPN Silicon Epitaxial Planar Transistor KTC4373
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter Symbol Test conditions MIN
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage V
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
CLASSIFICATION OF h
Rank O Y
Range 80-160 120-240
V
(BR)CBO IC
V
I
CBO
I
EBO
h
FE
V
V
f
T
C
FE(1)
IC=10mA,IB=0 120 V
(BR)CEO
IE=1mA,IC=0 5
(BR)EBO
CE(sat)
BE
ob
=1mA,IE=0 120 V
VCB=120V,IE=0 0.1 μA
VEB=5V,IC=0 0.1 μA
VCE=5V,IC=100mA 80 240
IC=500mA, IB= 50mA
=5V, IB= 500mA
V
CE
VCE=5V, IC= 0.1A
VCB=10V,IE=0,f=1MHz
1.0 V
1.0 V
120 MHz
30 pF
TYP MAX UNIT
V
MARKING CO CY
Document number: BL/SSSTG014 www.galaxycn.com
Rev.A 2
Loading...