BL Galaxy Electrical Production specification
NPN Silicon Epitaxial Planar Transistor KTC4076
FEATURES
z Excellent HFE Linearity.
z Complementary to KTA2015
Pb
Lead-free
z Power dissipation.(P
=100mW)
C
APPLICATIONS
z General purpose and switching application.
SOT-323
ORDERING INFORMATION
Type No. Marking Package Code
KTC4076 WO/WY SOT-323
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage
35 V
V
CEO
V
EBO
I
C
P
C
Tj,T
stg
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction and Storage Temperature
30 V
5 V
500 mA
100 mW
-55~150 ℃
Document number: BL/SSSTF049 www.galaxycn.com
Rev.A 1
BL Galaxy Electrical Production specification
NPN Silicon Epitaxial Planar Transistor KTC4076
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V
Collector-emitter breakdown
voltage
Emitter-base breakdown voltage V
Collector cut-off current I
Emitter cut-off current I
DC current gain h
Collector-emitter saturation voltage V
Transition frequency f
Collector output capacitance C
(BR)CBO IC
V
CBO
EBO
FE
T
IC=1mA,IB=0 30 V
(BR)CEO
IE=100μA,IC=0 5 V
(BR)EBO
CE(sat)
ob
=100μA,IE=0 35 V
VCB=35V,IE=0 0.1 μA
VEB=5V,IC=0 0.1 μA
VCE=1V,IC=100mA 70 240
VCE=6V,IC=400mA 25
IC=100mA, IB= 10mA 0.1 0.25 V
VCE=6V, IC= 20mA MHz
VCB=6V, IE=0mA
f=1MHz
7.0 pF
CLASSIFICATION OF h
Range O Y
Marking 70-140 120-240
FE(1)
Document number: BL/SSSTF049 www.galaxycn.com
Rev.A 2
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