BL Galaxy Electrical Production specification
NPN Silicon Epitaxial Planar Transistor KTC4075
FEATURES
Pb
z High and excellent DC current gain.
z Complementary to KTA2014.
z Small package.
APPLICATIONS
z General purpose application.
z Switching application.
SOT-23
ORDERING INFORMATION
Type No. Marking Package Code
KTC4075 LO/LY/LGR/LBL SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol Parameter Value Units
Lead-free
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj,T
stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Base Current
Collector Power Dissipation
Junction and Storage Temperature
60 V
50 V
5 V
150 mA
30 mA
100 mW
-55~150 ℃
Document number: BL/SSSTC112 www.galaxycn.com
Rev.A 1
BL Galaxy Electrical Production specification
NPN Silicon Epitaxial Planar Transistor KTC4075
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter Symbol Test conditions MIN
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage V
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
CLASSIFICATION OF h
FE
V
(BR)CBO IC
V
I
CBO
I
EBO
h
FE
V
f
T
C
IC=1mA,IB=0 50 V
(BR)CEO
IE=100μA,IC=0 5
(BR)EBO
CE(sat)
ob
=100μA,IE=0 60 V
VCB=60V,IE=0 0.1 μA
VEB=5V,IC=0 0.1 μA
VCE=6V,IC=2mA 70 700
IC=100mA, IB=10mA
VCE=10V, IC= 1mA
VCB=10V,IE=0,f=1MHz
0.1 0.25 V
80 MHz
2.0 3.5 pF
TYP MAX UNIT
V
Rank O Y GR BL
Range 70-140 120-240 200-400 350-700
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Document number: BL/SSSTC112 www.galaxycn.com
Rev.A 2
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