BL Galaxy Electrical Production specification
NPN Silicon Epitaxial Planar Transistor KTC3876
FEATURES
Pb
z Complementary To KTA1505.
z Excellent H
z Low noise.
Linearity.
FE
APPLICATIONS
z General purpose application, switching application.
SOT-23
ORDERING INFORMATION
Type No. Marking Package Code
KTC3876 WO▪/WY▪/WG▪ SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol Parameter Value Units
Lead-free
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj,T
stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction and Storage Temperature
35 V
30 V
5 V
500 mA
200 mW
-55~150 ℃
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Document number: BL/SSSTC057 www.galaxycn.com
Rev.A 1
BL Galaxy Electrical Production specification
NPN Silicon Epitaxial Planar Transistor KTC3876
Parameter Symbol Test conditions MIN
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage V
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
V
(BR)CBO IC
V
I
CBO
I
EBO
h
FE
V
f
T
IC=1mA,IB=0 30 V
(BR)CEO
IE=100μA,IC=0 5
(BR)EBO
CE(sat)
=100μA,IE=0 35 V
VCB=35V,IE=0 0.1 μA
VEB=5V,IC=0 0.1 μA
VCE=1V,IC=100mA
=6V,IC=400mA O
V
CE
Y
IC=100mA, IB=10mA
VCE=6V, IC= 20mA
70
25
40
0.25 V
300 MHz
TYP MAX UNIT
V
400
Collector output capacitance
CLASSIFICATION OF h
Rank O Y G
Range 70-140 120-240 200-400
Marking WO▪ WY▪ WG▪
C
FE
ob
VCB=6V,IE=0,f=1MHz
7 pF
Document number: BL/SSSTC057 www.galaxycn.com
Rev.A 2
Loading...