BL Galaxy Electrical Production specification
PNP Silicon Epitaxial Planar Transistor KTA2015
FEATURES
z Power dissipation.(PC=100mW)
z Excellent h
z Complementary to KTC4076.
z Small package.
Linearity.
FE
APPLICATIONS
z General purpose application and switching application. SOT-323
ORDERING INFORMATION
Type No. Marking Package Code
KTA2015 ZO/ZY SOT-323
Pb
Lead-free
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj,T
stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction and Storage Temperature
-35 V
-30 V
-5 V
-500 mA
100 mW
-55~150 ℃
Document number: BL/SSSTF048 www.galaxycn.com
Rev.A 1
BL Galaxy Electrical Production specification
PNP Silicon Epitaxial Planar Transistor KTA2015
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V
Collector-emitter breakdown
voltage
Emitter-base breakdown voltage V
Collector cut-off current I
Emitter cut-off current I
DC current gain h
Collector-emitter saturation voltage V
Transition frequency f
Collector output capacitance C
CLASSIFICANTION OF h
FE
(BR)CBO IC
V
CBO
EBO
FE
T
IC=-1mA,IB=0 -30 V
(BR)CEO
IE=-50μA,IC=0 -5 V
(BR)EBO
CE(sat)
ob
=-50μA,IE=0 -35 V
VCB=-35V,IE=0 -0.1 μA
VEB=-5V,IC=0 -0.1 μA
VCE=-1V,IC=-100mA
V
=-6V,IC=-400mA
CE
IC=-100mA, IB=-10mA -0.1 -0.25 V
VCE=-6V, IC= -20mA 200 MHz
VCB=-6V,IE=0,f=1MHz 13 pF
70
25
240
Rank O Y
Range 70-140 120-240
marking ZO ZY
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Document number: BL/SSSTF048 www.galaxycn.com
Rev.A 2
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