BL Galaxy Electrical Production specification
PNP Silicon Epitaxial Planar Transistor KTA1666
FEATURES
Pb
z High speed switching time.
z Low saturation voltage:V
z P
z Small flat package.
z Complementary: KTC4379.
=1~2W(Mounted on ceramic substrate)
C
=-0.5V(Max)
CE(sat)
APPLICATIONS
z Power amplifier application. SOT-89
z Power switching application.
ORDERING INFORMATION
Type No. Marking Package Code
KTA1666 WO/WY SOT-89
Lead-free
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
IB
P
C
Tj,T
stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Base Current
Collector Dissipation
Junction and Storage Temperature
-50 V
-50 V
-5 V
-2 A
-0.4 A
500 mW
-55~150 ℃
Document number: BL/SSSTG001 www.galaxycn.com
Rev.A 1
BL Galaxy Electrical Production specification
PNP Silicon Epitaxial Planar Transistor KTA1666
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter Symbol Test conditions MIN
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage V
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
CLASSIFICATION OF h
V
(BR)CBO IC
V
I
CBO
I
EBO
h
FE
V
V
f
T
C
FE(1)
IC=-10mA,IB=0 -50 V
(BR)CEO
IE=-1mA,IC=0 -5
(BR)EBO
CE(sat)
BE(sat)
ob
=-1mA,IE=0 -50 V
VCB=-50V,IE=0 -0.1 μA
VEB=-5V,IC=0 -0.1 μA
VCE=-2V,IC=-500mA
=-2V,IC=-1.5A
V
CE
IC=-1A, IB= -50mA
=-1A, IB= -50mA
I
C
VCE=-2V, IC= -0.5A
VCB=-10V,IE=0,f=1MHz
70
40
-0.5 V
-1.2 V
120 MHz
40 pF
TYP MAX UNIT
V
240
Rank O Y
Range 70-140 120-240
MARKING WO WY
Document number: BL/SSSTG001 www.galaxycn.com
Rev.A 2
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