BL Galaxy Electrical Production specification
Silicon Epitaxial Planar Transistor KTA1298
FEATURES
z High DC current gain:hFE=100-320.
z Low saturation voltage:V
=-500mA,IB=-20mA).
(I
C
z Suitable for driver stage of small motor.
z Complementary to KTC3265.
z Small package.
SOT-23
=-0.4V(Max)
CE(sat)
APPLICATIONS
z Low frequency power amplifier application.
z Power switching application.
Pb
Lead-free
ORDERING INFORMATION
Type No. Marking Package Code
KTA1298 IO/IY SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol Parameter Value Units
V
V
V
I
P
CBO
CEO
EBO
C
C
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
-35 V
-30 V
-5 V
-800 mA
200 mW
Tj,T
stg
Junction and Storage Temperature
-55~150 ℃
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Document number: BL/SSSTC095 www.galaxycn.com
Rev.A 1
BL Galaxy Electrical Production specification
Silicon Epitaxial Planar Transistor KTA1298
Parameter Symbol Test conditions MIN
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage V
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
V
(BR)CBO IC
V
I
CBO
I
EBO
h
FE
V
f
T
C
IC=-10mA,IB=0 -32 V
(BR)CEO
IE=-1mA,IC=0 -5
(BR)EBO
CE(sat)
ob
=-1mA,IE=0 -40 V
VCB=-30V,IE=0 -0.1 μA
VEB=-5V,IC=0 -0.1 μA
VCE=-1V,IC=-100mA
=-1V,IC=-800mA
V
CE
IC=-500mA, IB=-20mA
VCE=-5V, IC=-10mA
VCB=-10V,IE=0,f=1MHz
100
40
-0.4 V
120 MHz
13 pF
TYP MAX UNIT
V
320
CLASSIFICATION OF h
Rank O Y
Range 100-200 160-320
FE(1)
Document number: BL/SSSTC095 www.galaxycn.com
Rev.A 2
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