BL Galaxy Electrical Production specification
SILICON PNP EPITAXIAL TYPE TRANSISTOR HM879
FEATURES
Pb
z Charger-up time is about 1 mS faster
Than of a germanium transistor.
z Small saturation voltage can bring dissipation
And flasing times.
SOT-89
ORDERING INFORMATION
Type No. Marking Package Code
HM879 879 SOT-89
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage
Lead-free
30 V
V
CEX
V
CEO
V
EBO
I
C
P
C
Tj,T
stg
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current –Continuous
–Pluse
Collector Dissipation
Junction and Storage Temperature
20 V
10 V
6 V
3
A
5
1 W
-55~150 ℃
Document number: BL/SSSTG079 www.galaxycn.com
Rev.A 1
BL Galaxy Electrical Production specification
SILICON PNP EPITAXIAL TYPE TRANSISTOR HM879
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter Symbol Test conditions MIN
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage V
Collector to Emitter Voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
V
(BR)CBO IC
V
V
I
CBO
I
EBO
h
FE
V
f
T
C
IC=1mA,IB=0 10 V
(BR)CEO
IE=10μA,IC=0 6
(BR)EBO
(BR)CEX IC
CE(sat)
ob
=10μA,IE=0 30 V
=1mA,VBE=3V 20 V
VCB=20V,IE=0 100 nA
VEB=4V,IC=0 100 nA
VCE=2V,IC=3A 140 210 400
IC=3A, IB= 60mA
VCE=10V, IC= 50mA
VCB=10V,IE=0,f=1MHz
0.3 0.4 V
200 MHz
30 pF
TYP MAX UNIT
V
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Document number: BL/SSSTG079 www.galaxycn.com
Rev.A 2
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