BL Galaxy Electrical Production specification
PNP EPITAXIAL PLANAR TRANSISTOR HM4033
FEATURES
z The HM4033 is designed for high current
general purpose amplifier applications.
SOT-89
Pb
Lead-free
ORDERING INFORMATION
Type No. Marking Package Code
HM4403 H4403 SOT-89
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
P
D
Tj,T
stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Power Dissipation
Junction and Storage Temperature
-80 V
-80 V
-5 V
-1 A
1.2 W
-55~150 ℃
Document number: BL/SSSTG078 www.galaxycn.com
Rev.A 1
BL Galaxy Electrical Production specification
PNP EPITAXIAL PLANAR TRANSISTOR HM4033
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V
Collector-emitter breakdown voltage V
Emitter-base breakdown voltage V
Collector cut-off current I
Emitter cut-off current I
(BR)CBO IC
(BR)CEO
(BR)EBO
CBO
EBO
=-10μA,IE=0 -80 V
IC=-10mA,IB=0 -80 V
IE=-10μA,IC=0 -5 V
VCB=-60V -100 nA
VEB=-5V,IC=0 -100 nA
VCE=-5V,IC=-0.1mA
V
=-5V,IC=-0.1A
DC current gain h
Collector-emitter saturation voltage V
Base-emitter saturation voltage V
Transition frequency f
Collector output capacitance C
FE
CE(sat)
BE(sat)
T
ob
CE
V
=-5V,IC=-0.5A
CE
V
=-5V,IC=-1A
CE
IC=-150mA, IB= -15mA
I
=-500mA, IB= -50mA
C
I
=-150mA, IB= -15mA
C
I
=-500mA, IB= -50mA
C
VCE=-10V, IC= -50mA,
f=100MHz
VCB=-10V,IE=0,f=1MHz 20 pF
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
75
100
70
25
-0.15
-0.5
-0.9
-1.1
V
V
100 MHz
Document number: BL/SSSTG078 www.galaxycn.com
Rev.A 2
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