BL Galaxy Electrical Production specification
NPN Silicon Epitaxial Planar Transistor FMMT491
FEATURES
z Low saturation.
z Complementary To FMMT591.
Pb
Lead-free
z Excellent H
Linearity.
FE
APPLICATIONS
z Switching appilication.
SOT-23
ORDERING INFORMATION
Type No. Marking Package Code
FMMT491 491 SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol Parameter Value Units
V
V
V
I
P
T
CBO
CEO
EBO
C
C
，
j
T
stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction and Storage Temperature
80 V
60 V
5 V
1000 mA
500 mW
-55~150 ℃
Document number: BL/SSSTC052 www.galaxycn.com
Rev.A 1
BL Galaxy Electrical Production specification
NPN Silicon Epitaxial Planar Transistor FMMT491
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V
Collector-emitter breakdown voltage V
Emitter-base breakdown voltage V
Collector cut-off current I
Emitter cut-off current I
DC current gain h
Collector-emitter saturation voltage V
(BR)CBO IC
IC=10mA,IB=0 60 V
(BR)CEO
IE=100μA,IC=0 5 V
(BR)EBO
CBO
EBO
FE
CE(sat)
=100μA,IE=0 80 V
VCB=60V,IE=0 0.1 μA
VEB=4V,IC=0 0.1 μA
VCE=5V,IC=1mA 100
VCE=5V,IC=500mA 100 300
VCE=5V,IC=1A 80
VCE=5V,IC=2A 30
IC=500mA, IB= 50mA
I
=1A, IB= 100mA
C
0.25
0.5
V
Base-emitter saturation voltage V
Transition frequency f
Collector output capacitance C
IC=1A, IB= 100mA 1.1 V
BE(sat)
T
ob
f=100MHz
VCB=10V,f=1MHz 10 pF
VCE=10V, IC= 50mA
150 MHz
Document number: BL/SSSTC052 www.galaxycn.com
Rev.A 2
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