BL Galaxy Electrical Production specification
NPN Silicon Planar Medium Power Transistor FMMT449
FEATURES
z Low equivalent on-resistance,R
250mΩ at 1A.
z Complementary To FMMT549.
CE(sat)
:
APPLICATIONS
z NPN silicon planar medium power transistor.
SOT-23
ORDERING INFORMATION
Type No. Marking Package Code
FMMT449 449 SOT-23
Pb
Lead-free
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol Parameter Value Units
V
V
V
I
I
I
P
T
CBO
CEO
EBO
CM
C
B
tot
，
j
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Collector Current -Continuous
Base Current
Power Dissipation
T
stg
Junction and Storage Temperature
50 V
30 V
5 V
2 A
1 A
200 mA
500 mW
-55~150 ℃
Document number: BL/SSSTC051 www.galaxycn.com
Rev.A 1
BL Galaxy Electrical Production specification
NPN Silicon Planar Medium Power Transistor FMMT449
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V
Collector-emitter breakdown
voltage
Emitter-base breakdown voltage V
Collector cut-off current I
Emitter cut-off current I
DC current gain h
Collector-emitter saturation voltage V
(BR)CBO IC
V
CBO
EBO
FE
IC=10mA,IB=0 30 V
(BR)CEO
IE=-100μA,IC=0 5 V
(BR)EBO
CE(sat)
=1mA,IE=0 50 V
VCB=40V,IE=0
VCB=40V,IE=0T
amb
=100℃
0.1
10
μA
VEB=4V,IC=0 0.1 μA
VCE=2V,IC=50mA 70
VCE=2V,IC=500mA 100 300
VCE=2V,IC=1A 80
VCE=2V,IC=2A 40
IC=1A, IB= 100mA
I
=2A, IB= 200mA
C
0.5
1.0
V
Base-emitter saturation voltage V
Base-emitter turn-on voltage V
Transition frequency f
Output capacitance C
IC=1A, IB= 100mA 1.25 V
BE(sat)
BE(on)
T
obo
IC=1A,VCE=2V 1.0 V
VCE=10V, IC= 50mA
f=100MHz
150 MHz
VCB=10V,f=1MHz 15 pF
Document number: BL/SSSTC051 www.galaxycn.com
Rev.A 2
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