BL Galaxy Electrical Production specification
NPN medium power Transistors
BSR40/BSR41/BSR42/BSR43
FEATURES
z High current(max.1A)
Pb
z Low voltage(max.80V)
z Thick and thin-film circuits.
z Telephony and general industrial applications.
z NPN complements:BSR30,BSR31 and BSR33.
SOT-89
ORDERING INFORMATION
Type No. Marking Package Code
BSR40 AR1 SOT-89
BSR41 AR2 SOT-89
BSR42 AR3 SOT-89
BSR43 AR4 SOT-89
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol Parameter Value Unit
Lead-free
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
Peak base current 0.2 A
BM
P
tot
Tj,T
stg
Collector-Base Voltage BSR40 BSR41
BSR42 BSR43
Collector-Emitter Voltage BSR40 BSR41
BRS42 BSR43
Emitter-Base Voltage 5 V
DC Collector Current 1 A
Peak Collector Current 2 A
Total power dissipation,TS=130℃
Junction and Storage Temperature -65 to+150
70
90
60
80
1.35 W
V
V
℃
Document number: BL/SSSTG072 www.galaxycn.com
Rev.A 1
BL Galaxy Electrical Production specification
NPN medium power Transistors
BSR40/BSR41/BSR42/BSR43
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter Symbol Test conditions MIN MAX UNIT
VCB=60V IE=0 100 nA
Collector cut-off current I
CBO
V
=60V IE=0,TA=150℃
CB
50 μA
Emitter-base cut-off
current
I
EBO
DC current gain hFE
Collector-emitter
saturation voltage
Base-emitter
saturation voltage
V
CE(sat)
V
BE(sat)
Collector capacitance Cc
Emitter capacitance C
Transition frequency f
e
T
VCE=5V IC=0A 100 nA
VCE=5V IC=100uA BSR40;BSR42
BSR41;BSR43
VCE=5V IC=100mA BSR40;BSR42
BSR41;BSR43
=5V IC=500mA BSR40;BSR42
V
CE
BSR41;BSR43
IC=150mA IB=15mA
I
=500mA IB=50mA
C
IC=150mA IB=15mA
I
=500mA IB=50mA
C
I
=0A,VCB=10V
E=ie
f=1MHz
IC=ic=0A,VEB=10V
f=1MHz
VCE=10V, IC=50mA,
f=100MHz
10
30
40
100
30
50
120
300
0.25
0.5
1
1.2
V
V
12 pF
90 pF
100 MHz
Turn-on time t
Turn-off time t
on
on
I
=100mA;I
Con
=5mA;I
Bon
=-5mA
Bon
250 Ns
1 us
Document number: BL/SSSTG072 www.galaxycn.com
Rev.A 2
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