BL Galaxy Electrical
Production specification
NPN medium power Transistors
BSR40/BSR41/BSR42/BSR43
FEATURES
z |
High current(max.1A) |
Pb |
|
z |
Low voltage(max.80V) |
||
Lead-free |
|||
|
|
zThick and thin-film circuits.
zTelephony and general industrial applications.
zNPN complements:BSR30,BSR31 and BSR33.
SOT-89
ORDERING INFORMATION
Type No. |
Marking |
Package Code |
|
|
|
BSR40 |
AR1 |
SOT-89 |
BSR41 |
AR2 |
SOT-89 |
BSR42 |
AR3 |
SOT-89 |
BSR43 |
AR4 |
SOT-89 |
|
|
|
MAXIMUM RATING @ Ta=25 unless otherwise specified
Symbol |
Parameter |
|
|
Value |
Unit |
|
|
|
|
|
|
VCBO |
Collector-Base Voltage |
BSR40 |
BSR41 |
70 |
V |
|
BSR42 |
BSR43 |
90 |
||
|
|
|
|||
|
|
|
|
|
|
VCEO |
Collector-Emitter Voltage |
BSR40 |
BSR41 |
60 |
V |
|
BRS42 |
BSR43 |
80 |
||
|
|
|
|||
|
|
|
|
|
|
VEBO |
Emitter-Base Voltage |
|
|
5 |
V |
|
|
|
|
|
|
IC |
DC Collector Current |
|
|
1 |
A |
|
|
|
|
|
|
ICM |
Peak Collector Current |
|
|
2 |
A |
|
|
|
|
|
|
IBM |
Peak base current |
|
|
0.2 |
A |
|
|
|
|
|
|
Ptot |
Total power dissipation,TS=130 |
|
1.35 |
W |
|
|
|
|
|
|
|
Tj,Tstg |
Junction and Storage Temperature |
|
-65 to+150 |
|
|
|
|
|
|
|
|
Document number: BL/SSSTG072 |
www.galaxycn.com |
Rev.A |
1 |
BL Galaxy Electrical
Production specification
NPN medium power Transistors
BSR40/BSR41/BSR42/BSR43
ELECTRICAL CHARACTERISTICS @ Ta=25 unless otherwise specified
Parameter |
Symbol |
Test conditions |
|
MIN |
MAX |
UNIT |
|
|
|
|
|
|
|
|
|
VCB=60V IE=0 |
|
|
100 |
nA |
Collector cut-off current |
ICBO |
|
|
|
|
|
VCB=60V IE=0,TA=150 |
|
50 |
μA |
|||
|
|
|
||||
|
|
|
|
|
|
|
Emitter-base cut-off |
IEBO |
VCE=5V IC=0A |
|
|
100 |
nA |
current |
|
|
||||
|
|
|
|
|
|
|
|
|
VCE=5V IC=100uA |
BSR40;BSR42 |
10 |
|
|
|
|
|
BSR41;BSR43 |
30 |
|
|
DC current gain |
hFE |
VCE=5V IC=100mA |
BSR40;BSR42 |
40 |
120 |
|
|
BSR41;BSR43 |
100 |
300 |
|
||
|
|
|
|
|||
|
|
VCE=5V IC=500mA |
BSR40;BSR42 |
30 |
|
|
|
|
|
BSR41;BSR43 |
50 |
|
|
Collector-emitter |
VCE(sat) |
IC=150mA IB=15mA |
|
|
0.25 |
V |
saturation voltage |
IC=500mA IB=50mA |
|
|
0.5 |
||
|
|
|
|
|||
Base-emitter |
VBE(sat) |
IC=150mA IB=15mA |
|
|
1 |
V |
saturation voltage |
IC=500mA IB=50mA |
|
|
1.2 |
||
|
|
|
|
|||
Collector capacitance |
Cc |
IE=ie=0A,VCB=10V |
|
|
12 |
pF |
f=1MHz |
|
|
||||
|
|
|
|
|
|
|
Emitter capacitance |
Ce |
IC=ic=0A,VEB=10V |
|
|
90 |
pF |
f=1MHz |
|
|
||||
|
|
|
|
|
|
|
Transition frequency |
fT |
VCE=10V, IC=50mA, |
|
100 |
|
MHz |
f=100MHz |
|
|
||||
|
|
|
|
|
|
|
Turn-on time |
ton |
|
|
|
250 |
Ns |
|
|
ICon=100mA;IBon=5mA;IBon=-5mA |
|
|
|
|
Turn-off time |
ton |
|
1 |
us |
||
|
|
|
||||
|
|
|
|
|
|
|
Document number: BL/SSSTG072 |
www.galaxycn.com |
Rev.A |
2 |
Loading...