BL Galaxy Electrical BCX54, BCX54-10, BCX54-16, BCX55, BCX55-10 Schematic [ru]

BL Galaxy Electrical

Production specification

	NPN Silicon AF Transistors	BCX54/BCX55/BCX56
	FEATURES
	z For AF driver and output stages	Pb
	z High collector current
		Lead-free

zLow collector-emitter saturation voltage

zComplementary types:BCX51…BCX53(PNP)

SOT-89

ORDERING INFORMATION

Type No.	Marking	Package Code
BCX54	BA	SOT-89
BCX54-10	BC	SOT-89
BCX54-16	BD	SOT-89
BCX55	BE	SOT-89
BCX55-10	BG	SOT-89
BCX55-16	BM	SOT-89
BCX56	BH	SOT-89
BCX56-10	BK	SOT-89
BCX56-16	BL	SOT-89

MAXIMUM RATING @ Ta=25 unless otherwise specified

Symbol	Parameter		Value	Unit
	Collector-Base Voltage	BCX54	45
VCBO		BCX55	60	V
		BCX56	100
	Collector-Emitter Voltage	BCX54	45
VCEO		BCX55	60	V
		BCX56	80
VEBO	Emitter-Base Voltage		5	V
IC	DC Collector Current		1	A
ICM	Peak Collector Current		1.5	A
IB	Base current		100	mA
IBM	Peak base current		200	mA
Ptot	Total power dissipation,TS=130		1	W
Tj,Tstg	Junction and Storage Temperature		-65 to+150

Document number: BL/SSSTG033	www.galaxycn.com
Rev.A	1

BL Galaxy Electrical

Production specification

	NPN Silicon AF Transistors		BCX54/BCX55/BCX56
	ELECTRICAL CHARACTERISTICS @ Ta=25 unless otherwise specified
Parameter		Symbol	Test conditions		MIN	MAX	UNIT
			IC=100μA IB=0	BCX54	45
Collector-base breakdown voltage		V(BR)CBO		BCX55	60		V
				BCX56	100
			IC=10mA IB=0	BCX54	45
Collector-emitter breakdown voltage		V(BR)CEO		BCX55	60		V
				BCX56	80
Emitter-base breakdown voltage		V(BR)EBO	IE=10μA IC=0		5		V
Collector cut-off current		ICBO	VCB=30V IE=0			100	nA
			VCB=30V IE=0,TA=150			20	μA
			VCE=2V IC=5mA		25
DC current gain		hFE	VCE=2V IC=150mA		40	250
			VCE=2V IC=500mA		25
Collector-emitter saturation voltage		VCE(sat)	IC=500mA IB=50mA			0.5	V
Base-emitter voltage		VBE	IC=500mA ,VCE=2V			1	V
Transition frequency		fT	VCE=10V, IC=50mA,		100		MHz
			f=20MHz
	TYPICAL CHARACTERISTICS @ Ta=25 unless otherwise specified

Document number: BL/SSSTG033	www.galaxycn.com
Rev.A	2