BL Galaxy Electrical Production specification
NPN Silicon AF Transistors BCX54/BCX55/BCX56
FEATURES
z For AF driver and output stages
Pb
z High collector current
z Low collector-emitter saturation voltage
z Complementary types:BCX51…BCX53(PNP)
SOT-89
ORDERING INFORMATION
Type No. Marking Package Code
BCX54 BA SOT-89
BCX54-10 BC SOT-89
BCX54-16 BD SOT-89
BCX55 BE SOT-89
BCX55-10 BG SOT-89
BCX55-16 BM SOT-89
BCX56 BH SOT-89
BCX56-10 BK SOT-89
BCX56-16 BL SOT-89
Lead-free
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol Parameter Value Unit
Collector-Base Voltage BCX54
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
I
Peak base current 200 mA
BM
P
tot
BCX55
BCX56
Collector-Emitter Voltage BCX54
BCX55
BCX56
Emitter-Base Voltage 5 V
DC Collector Current 1 A
Peak Collector Current 1.5 A
Base current 100 mA
Total power dissipation,TS=130℃
45
60
100
45
60
80
1 W
V
V
Tj,T
stg
Document number: BL/SSSTG033 www.galaxycn.com
Rev.A 1
Junction and Storage Temperature -65 to+150
℃
BL Galaxy Electrical Production specification
NPN Silicon AF Transistors BCX54/BCX55/BCX56
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter Symbol Test conditions MIN MAX UNIT
Collector-base breakdown voltage V
Collector-emitter breakdown voltage V
Emitter-base breakdown voltage V
Collector cut-off current I
DC current gain h
Collector-emitter saturation voltage V
Base-emitter voltage V
Transition frequency f
(BR)CBO
(BR)CEO
(BR)EBO IE
CBO
FE
CE(sat)
BE
T
IC=100μA IB=0 BCX54
BCX55
BCX56
IC=10mA IB=0 BCX54
BCX55
BCX56
45
60
100
45
60
80
V
V
=10μA IC=0 5 V
VCB=30V IE=0 100 nA
V
=30V IE=0,TA=150℃
CB
VCE=2V IC=5mA
V
=2V IC=150mA
CE
V
=2V IC=500mA
CE
20 μA
25
40
250
25
IC=500mA IB=50mA 0.5 V
IC=500mA ,VCE=2V 1 V
VCE=10V, IC=50mA,
f=20MHz
100 MHz
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Document number: BL/SSSTG033 www.galaxycn.com
Rev.A 2
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