BL Galaxy Electrical Production specification
High-speed double Diode BAV70T
FEATURES
z Very small plastic SMD package.
z High switching speed:max.4ns.
z Continuous reverse voltage:max.75V.
z Repetitive peak reverse voltage:max.85V.
z Repetitive peak forward current:max.500 mA.
SOT-523
Pb
Lead-free
APPLICATIONS
z High-speed switching in e.g. surface mounted circuits
ORDERING INFORMATION
Type No. Marking Package Code
BAV70T JJ SOT-523
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol Parameter Value Units
V
RRM
VR Continuous reverse voltage 75 V
I
FM
I
FRM
I
FSM
P
tot
Tj,T
stg
Peak repetitive reverse voltage 85 V
Forward continuous current(MAX.) single diode loaded
Both diodes loaded
Repetitive peak forward current 500 mA
Non-repetitive peak forward surge current
@t=1.0μs
@t=1.0ms
@t=1.0s
Total power dissipation TS=90℃;one diode loaded
Junction and Storage Temperature -65~150
150
75
4
1
0.5
170 mW
mA
A
℃
Document number: BL/SSSDH023 www.galaxycn.com2
Rev.A 1
BL Galaxy Electrical Production specification
High-speed double Diode BAV70T
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter Symbol Test conditions MIN MAX UNIT
V
=25V
R
V
=75V
Leakage current IR
Forward voltage VF
Diode capacitance C
Forward recovery voltage V
Reverse recovery Time t
rr
R
VR=25V,Tj=150℃
V
=75V,Tj=150℃
R
I
=1mA
F
I
=10mA
F
I
=50mA
F
I
=150mA
F
d
ff
VR=0V,f=1MHz 1.5 pF
IF=10mA,tr=20ns 1.75 V
IF=IR=10mA,Irr=0.1*IR,RL=100Ω 4 ns
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
30
2
60
100
0.715
0.855
1
1.25
nA
μA
μA
μA
V
Document number: BL/SSSDH023 www.galaxycn.com2
Rev.A 2
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