BL Galaxy Electrical Production specification
Low-leakage double diode BAV170
FEATURES
z Plastic SMD package
z Low leakage current:
typ. 3pA
z Switching time: typ. 0.8 ms
z Continuous reverse voltage: max. 75V
z Repetitive peak reverse voltage: max. 85V
z Repetitive peak forward current: max. 500mA. SOT-23
Pb
Lead-free
APPLICATIONS
z Low-leakage current applications in surface mounted circuits.
ORDERING INFORMATION
Type No. Marking Package Code
BAV170 JX SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Characteristic Symbol Limits Unit
Repetitive Peak Reverse Voltage
DC Reverse Voltage
Forward Continuous Current single diode loaded
double diode loaded
repetitive peak forward current
non-repetitive peak forward current square wave;
T
=25C prior to surge; tp=1μs
j
t
t
Total Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
=1ms
p
=1s
p
V
RRM
V
75 V
R
I
F
I
FRM
I
FSM
P
tot
T
j
T
STG
85 V
215
mA
125
500 mA
4
1
0.5
250 mW
150 ℃
-65 to +125 ℃
A
Document number: BL/SSSDC038 www.galaxycn.com
Rev.A 1
BL Galaxy Electrical Production specification
Low-leakage double diode BAV170
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Characteristic Symbol Typ
MAX UNIT
900
Forward Voltage
V
F
1000
1100
1250
Reverse Leakage Current
I
R
5
80
Junction Capacitance
Reverse Recovery Time
C
j
t
rr
2.0 pF
3 μs
mV
nA
Test Condition
=1mA
I
F
=10mA
I
F
=50mA
I
F
=100mA
I
F
V
=75V
R
=75V,TJ=150℃
V
R
=0V,f=1.0MHz
V
R
=10mA,Irr=0.1*IR
I
F=IR
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Document number: BL/SSSDC038 www.galaxycn.com
Rev.A 2
Loading...