BL Galaxy Electrical Production specification
High Voltage Fast Switching NPN Power Transistor
3DD13003
FEATURES
z PC=1.5W(Mounted on ceramic substrate)
z High speed switching.
z Small flat package.
Pb
Lead-free
APPLICATIONS
z High voltage switch mode application.
SOT-89
ORDERING INFORMATION
Type No. Marking Package Code
3DD13003 13003 SOT-89
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage
700 V
V
CEO
V
EBO
I
C
P
C
Tj,T
stg
Document number: BL/SSPTG003 www.galaxycn.com
Rev.A 1
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction and Storage Temperature
400 V
9 V
1.5 A
1.5 W
-55~150 ℃
BL Galaxy Electrical Production specification
High Voltage Fast Switching NPN Power Transistor
3DD13003
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter Symbol Test conditions MIN
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage V
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
Transition frequency
Fall time
Storage time
V
(BR)CBO IC
V
I
CBO
I
CEO
I
EBO
h
FE
V
V
V
f
T
t
f
t
s
IC=10mA,IB=0 400 V
(BR)CEO
IE=1mA,IC=0 9
(BR)EBO
CE(sat)
BE(sat)
BE
=1mA,IE=0 700 V
VCB=700V,IE=0 1000 μA
VCB=400V,IE=0 500 μA
VEB=9V,IC=0 1000 μA
VCE=5V,IC=0.5A
=5V,IC=1.5A
V
CE
IC=1A, IB= 250mA
=1A, IB= 250mA
I
C
=2000mA
I
E
8
5
1 V
1.2 V
3 V
VCE=10V, IC=0.1A,
f=1MHz
IC=1A,IB1=IB2=0.2A,
V
=100V
CC
5 MHz
0.5 μS
2.5 μS
TYP MAX UNIT
V
40
CLASSIFICATION OF h
FE(1)
Range 8-10 10-15 15-20 20-25 25-30 30-35 35-40
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Document number: BL/SSPTG003 www.galaxycn.com
Rev.A 2
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