BL Galaxy Electrical Production specification
Silicon Epitaxial Planar Transistor 2SD602A
FEATURES
Pb
z Complementary to 2SB710A
PNP Transistor.
z Low collector to emitter saturation voltage V
APPLICATIONS
z General purpose amplifier applications. SOT-23
ORDERING INFORMATION
Type No. Marking Package Code
2SD602A XQ/XR/XS SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol Parameter Value Units
Lead-free
.
CE(sat)
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
Tj,T
stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak collector current
Collector power Dissipation
Junction and Storage Temperature
60 V
50 V
5 V
500 mA
1 A
200 mW
-55~150 ℃
Document number: BL/SSSTC181 www.galaxycn.com
Rev.A 1
BL Galaxy Electrical Production specification
Silicon Epitaxial Planar Transistor 2SD602A
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter Symbol Test conditions MIN
Collector-base breakdown voltage
Collector-emitter breakdown
voltage
Emitter-base breakdown voltage
Collector cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Output capacitance
V
(BR)CBO IC
V
V
I
CBO
h
FE
V
f
T
C
IC=10mA,IB=0 50 V
(BR)CEO
(BR)EBO IE
CE(sat)
ob
=10μA,IE=0 60 V
=10μA,IC=0 5 V
VCB=20V,IE=0 0.1 μA
VCE=10V,IC=150mA
=-10V,IC=500mA
V
CE
IC=300mA, IB=30mA
VCB=10V, IE= -50mA,
f=200MHz
VCB=10V, IE=0,f=1MHz
85
40
0.35 0.6 V
200 MHz
6 15 pF
TYP MAX UNIT
340
CLASSIFICATION OF h
Rank Q R S
h
FE1
Marking
85-170 120-240 170-340
FE(1)
XQ XR XS
Document number: BL/SSSTC181 www.galaxycn.com
Rev.A 2
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