BL Galaxy Electrical Production specification
Silicon Epitaxial Planar Transistor 2SD1819A
FEATURES
z Low collector to emitter saturation voltage.
z High forward current transfer ratio h
z Complementary to 2SB1218A.
z Small package.
FE
.
Pb
Lead-free
APPLICATIONS SOT-323
z For general amplification.
ORDERING INFORMATION
Type No. Marking Package Code
2SD1819A ZQ/ZR/ZS SOT-323
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj,T
stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction and Storage Temperature
60 V
50 V
7 V
100 mA
150 mW
-55~150 ℃
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Document number: BL/SSSTF043 www.galaxycn.com
Rev.A 1
BL Galaxy Electrical Production specification
Silicon Epitaxial Planar Transistor 2SD1819A
Parameter Symbol Test conditions MIN
TYP MAX UNIT
Collector-base breakdown
voltage
V
(BR)CBO IC
=10μA,IE=0 60 V
Collector-emitter breakdown
voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
DC current gain
Collector-emitter saturation
voltage
Transition frequency
Collector output capacitance
CLASSIFICATION OF h
V
V
I
CBO
I
CEO
h
FE
V
f
T
C
IC=2mA,IB=0 50 V
(BR)CEO
(BR)EBO IE
=10μA,IC=0 7 V
VCB=20V,IE=0 0.1 μA
VEB=10V,IB=0 0.1 μA
CE(sat)
ob
FE
VCE=10V,IC=2mA
=2V,IC=100mA
V
CE
IC=100mA,IB=10mA
VCB=10V, IE=-2mA, f=200MHz
VCB=10V,IE=0,f=1MHz
160
90
0.1 0.3 V
150 MHz
3.5 pF
460
Range 160-260 210-340 290-460
Marking ZQ ZR ZS
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Document number: BL/SSSTF043 www.galaxycn.com
Rev.A 2
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