BL Galaxy Electrical Production specification
Silicon Epitaxial Planar Transistor 2SC945
FEATURES
Pb
z High voltage and high current.
z Excellent h
z Low noise.
linearity.
FE
APPLICATIONS
z Audio frequency amplifier.
SOT-23
ORDERING INFORMATION
Type No. Marking Package Code
2SC945 CR SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage
Lead-free
60 V
V
CEO
V
EBO
I
C
P
C
Tj,T
stg
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction and Storage Temperature
50 V
5 V
150 mA
200 mW
-55~150 ℃
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Document number: BL/SSSTC017 www.galaxycn.com
Rev.A 1
BL Galaxy Electrical Production specification
Silicon Epitaxial Planar Transistor 2SC945
Parameter Symbol Test conditions MIN
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
V
(BR)CBO IC
V
V
I
CBO
I
CEO
I
EBO
h
FE
V
IC=1mA,IB=0 50 V
(BR)CEO
(BR)EBO IE
CE(sat)
=0.1mA,IE=0 60 V
=0.1mA,IC=0 5 V
VCB=60V,IE=0 0.1 μA
VCE=50V,IB=0 0.1 μA
VEB=5V,IC=0 0.1 μA
VCE=6V,IC=1mA
=6V,IC=0.1mA
V
CE
IC=100mA, IB=10mA
130
40
0.3 V
TYP MAX UNIT
400
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise figure
CLASSIFICATION OF h
V
BE(sat)
f
T
C
ob
NF
FE(1)
=100mA, IB=10mA
I
C
VCE=6V, IC=10mA
f=30MHz
VCB=10V,IE=0,f=1MHz
VCE=6V, IC=0.1mA
f=1kMHz,R
=10kΩ
g
1 V
150 MHz
3.0 pF
4 10 dB
Rank L H
Range 130-200 200-400
Document number: BL/SSSTC017 www.galaxycn.com
Rev.A 2
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