BL Galaxy Electrical Production specification
Silicon Epitaxial Planar Transistor 2SC5345
FEATURES
Pb
z High current transition frequency.
z Low output capacitance:C
z Low base time constant and high gain.
z Excellent noise response.
=1.4pF
ob
APPLICATIONS SOT-23
z General small signal amplifier.
ORDERING INFORMATION
Type No. Marking Package Code
2SC5345 5345 SOT-23
Lead-free
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj,T
stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction and Storage Temperature
30 V
20 V
4 V
20 mA
200 mW
-55~150 ℃
Document number: BL/SSSTC101 www.galaxycn.com
Rev.A 1
BL Galaxy Electrical Production specification
Silicon Epitaxial Planar Transistor 2SC5345
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter Symbol Test conditions MIN
Collector-base breakdown voltage
Collector-emitter breakdown
voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation
voltage
Transition frequency
Output capacitance
V
(BR)CBO IC
V
V
I
CBO
I
EBO
h
FE
V
f
T
C
IC=5mA,IB=0 20 V
(BR)CEO
(BR)EBO IE
CE(sat)
ob
=10μA,IE=0 30 V
=10μA,IC=0 4 V
VCB=30V,IE=0 0.5 μA
VEB=4V,IC=0 0.5 μA
VCE=6V,IC=1mA 40 240
IC=10mA, IB=1mA
VCE=6V, IC= 1mA
VCB=6V, IE=0,f=1MHz
0.3 V
550 MHz
1.4 pF
TYP MAX UNIT
CLASSIFICATION OF h
Rank R O Y
Range 40-80 70-140 120-240
Marking 5345
FE
Document number: BL/SSSTC101 www.galaxycn.com
Rev.A 2
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