BL Galaxy Electrical Production specification
Silicon Epitaxial Planar Transistor 2SC5344
FEATURES
Pb
z Excellent hFE linearity
z Power dissipation.
APPLICATIONS
z General small signal amplifier.
SOT-23
ORDERING INFORMATION
Type No. Marking Package Code
2SC5344 FAO/FAY SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol Parameter Value Units
Lead-free
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj,T
stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction and Storage Temperature
35 V
30 V
5 V
800 mA
200 mW
-55~150 ℃
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Document number: BL/SSSTC023 www.galaxycn.com
Rev.A 1
BL Galaxy Electrical Production specification
Silicon Epitaxial Planar Transistor 2SC5344
Parameter Symbol Test conditions MIN
Collector-base breakdown voltage
V
(BR)CBO
IC=100μA,IE=0 35 V
TYP MAX UNIT
Collector-emitter breakdown
voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation
voltage
Transition frequency
Output capacitance
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
C
ob
IC=10mA,IB=0 B 30 V
IE=10μA,IC=0 5 V
VCB=35V,IE=0 0.1 μA
VEB=5V,IC=0 0.1 μA
VCE=1V,IC=100mA 100 320
IC=500mA, IB=50mA B
VCE=5V, IC= 10mA
VCB=10V, IE=0,f=1kHz
0.5 V
120 MHz
13 pF
CLASSIFICATION OF h
FE
Rank O Y
Range 100-200 160-320
Marking FAO FAY
Document number: BL/SSSTC023 www.galaxycn.com
Rev.A 2
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