BL Galaxy Electrical Production specification
Silicon Epitaxial Planar Transistor 2SC5343
FEATURES
Pb
z Excellent hFE linearity
(2)=100(Typ) at VCE=6V,IC=150Ma
:h
FE
=0.1mA)/hFE(IC=2mA)=0.95(Typ).
:h
FE(IC
z Low noise:NF=1Db(Typ).at f=1KHz.
z Complementary pair with 2SA1980S.
APPLICATIONS
z General small signal amplifier. SOT-23
ORDERING INFORMATION
Type No. Marking Package Code
2SC5343 5343 SOT-23
Lead-free
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj,T
stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Base Current-Continuous
Collector Dissipation
Junction and Storage Temperature
60 V
50 V
5 V
150 mA
50 mA
200 mW
-55~150 ℃
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Document number: BL/SSSTC022 www.galaxycn.com
Rev.A 1
BL Galaxy Electrical Production specification
Silicon Epitaxial Planar Transistor 2SC5343
Parameter Symbol Test conditions MIN
Collector-base breakdown voltage
V
(BR)CBO IC
=100μA,IE=0 60 V
TYP MAX UNIT
Collector-emitter breakdown
voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation
voltage
Transition frequency
Output capacitance
Noise Figure
V
V
I
CBO
I
EBO
h
FE
V
f
T
C
NF
IC=10mA,IB=0 50 V
(BR)CEO
(BR)EBO IE
=10μA,IC=0 5 V
VCB=60V,IE=0 0.1 μA
VEB=5V,IC=0 0.1 μA
VCE=6V,IC=2mA 70 700
CE(sat)
ob
IC=100mA, IB=10mA
VCE=10V, IC= 1mA
VCB=10V, IE=0,f=1MHz
V
=6V,IC=0.1mA,f=1kHz
CE
R
=10KΩ
g
0.1 0.25 V
80 MHz
2 3.5 pF
10 dB
CLASSIFICATION OF h
FE(1)
Rank O Y G L
Range 70-140 120-240 200-400 300-700
Document number: BL/SSSTC022 www.galaxycn.com
Rev.A 2
Loading...