BL Galaxy Electrical Production specification
PNP Epitaxial Planar Silicon Transistor 2SC4548
FEATURES
Pb
z High breakdown voltage.
z Adoption of MBIT process.
z Excellent h
linearlity.
FE
ORDERING INFORMATION
Type No. Marking Package Code
2SA1740 CN SOT-89
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol Parameter Value Units
Lead-free
SOT-89
V
CBO
V
CEO
V
EBO
I
C
ICP
P
C
Tj,T
stg
Note1:Mounted on ceramic substrate(250mm2*0.8t)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Current(Pulse)
Collector Dissipation (Note1)
Junction and Storage Temperature
400 V
400 V
5 V
200 mA
400 mA
1.3 W
-55~150 ℃
Document number: BL/SSSTG055 www.galaxycn.com
Rev.A 1
BL Galaxy Electrical Production specification
PNP Epitaxial Planar Silicon Transistor 2SC4548
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter Symbol Test conditions MIN
Collector-base breakdown voltage
Collector- emitter breakdown voltage
Emitter- base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Base-emitter saturation voltage
Collector-emitter saturation voltage
V
V
V
I
I
h
V
V
Transition frequency fT
Output capacitance
Reverse Transfer Capacitance
C
C
(BR)CBO
(BR)CEO
(BR)EBO
CBO
EBO
FE
BE(sat)
CE(sat)
ob
re
IC=10uA,IE=0
400 V
IC=10mA,IB=0 400 V
IE=10uA,IC=0 5 V
VCB=300V,IE=0 0.1 μA
VEB=4V,IC=0 0.1 μA
VCE=10V,IC=50mA 60 200
=50mA,IB=5mA
I
C
IC=50mA,IB=5mA
V
=30V, IC=10mA
CE
VCB=30V,IE=0,f=1MHz
=30V,IE=0,f=1MHz
V
CB
1 V
0.8 V
70 MHz
4 pF
3 pF
TYP MAX UNIT
Turn-ON Time
Turn-OFF Time
t
on
t
off
VCC=150V,IC=50mA,
I
=5mA
B1=IB2
0.25 uS
5 uS
Document number: BL/SSSTG055 www.galaxycn.com
Rev.A 2
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