BL Galaxy Electrical Production specification
NPN Epitaxial Planar Silicon Transistor 2SC4272
FEATURES
Pb
z Small size making it easy to
provide high-density,small-sized
hybrid IC′s.
ORDERING INFORMATION
Type No. Marking Package Code
2SC4272 CH SOT-89
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage
Lead-free
SOT-89
75 V
V
CEO
V
EBO
I
C
I
CP Collector Current(Pulse)
P
C
Tj,T
stg
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction and Storage Temperature
45 V
5 V
1.0 A
1.5 A
500 mW
-55~150 ℃
Document number: BL/SSSTG054 www.galaxycn.com
Rev.A 1
BL Galaxy Electrical Production specification
NPN Epitaxial Planar Silicon Transistor 2SC4272
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter Symbol Test conditions MIN
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
C
ob
IC=10uA,IE=0 75 V
IC=1mA,IB=0 45 V
IE=10uA,IC=0 5 V
VCB=40V,IE=0 0.1 μA
VEB=4V,IC=0 0.1 μA
VCE=5V,IC=500mA 60 320
IC=0.5A, IB=0.05A
IC=0.5A, IB=0.05A
VCE=10V,Ic=50mA
VCB=10V,IE=0,f=1MHz
0.2 0.6 V
0.9 1.2 V
180 250 MHz
15 pF
TYP MAX UNIT
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Document number: BL/SSSTG054 www.galaxycn.com
Rev.A 2
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