BL Galaxy Electrical Production specification
Silicon Epitaxial Planar Transistor 2SC2411
FEATURES
z Power dissipation: PCM=200mW
z High I
z Low V
z Complements the 2SA1036.
CM(MAX.),I CM(MAX.)
CE(sat).
=0.5mA.
Pb
Lead-free
APPLICATIONS
z NPN Silicon Epitaxial Planar Transistor SOT-23
ORDERING INFORMATION
Type No. Marking Package Code
2SC2411 CP/CQ/CR SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage
40 V
V
CEO
V
EBO
I
C
P
C
Tj,T
stg
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction and Storage Temperature
32 V
5 V
500 mA
200 mW
-55~150 ℃
Document number: BL/SSSTC097 www.galaxycn.com
Rev.A 1
BL Galaxy Electrical Production specification
Silicon Epitaxial Planar Transistor 2SC2411
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter Symbol Test conditions MIN
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Collector output capacitance
V
(BR)CBO IC
V
V
I
CBO
I
EBO
h
FE
V
C
IC=1mA,IB=0 32 V
(BR)CEO
(BR)EBO IE
CE(sat)
ob
=100μA,IE=0 40 V
=100μA,IC=0 5 V
VCB=20V,IE=0 1 μA
VEB=4V,IC=0 1 μA
VCE=3V,IC=100mA 82 390
IC=500mA, IB=50mA
VCB=10V,IE=0
f=1MHz
0.4 V
6.0 pF
TYP MAX UNIT
Transition frequency
CLASSIFICATION OF h
Rank P Q R
Range 82-180 120-270 180-390
Marking CP CQ CR
FE(1)
f
T
VCE=5V, IC= 20mA
f=100MHZ
250 MHz
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Document number: BL/SSSTC097 www.galaxycn.com
Rev.A 2
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