BL Galaxy Electrical Production specification
Silicon Epitaxial Planar Transistor 2SC1815
FEATURES
Pb
z High voltage and high current
=50V(Min),IC=150mA(Max)
V
CEO
z Excellent h
h
z Low noise.
z Complementary to 2SA1015.
SOT-23
linearity : h
FE
=100 (Typ) at VCE=6V,IC=150mA
FE(2)
=0.1mA) / hFE(IC=2mA=0.95(Typ))
FE(IC
APPLICATIONS
z Audio frequency general
ORDERING INFORMATION
Type No. Marking Package Code
2SC1815 HF SOT-23
Lead-free
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj,T
stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction and Storage Temperature
60 V
50 V
5 V
150 mA
200 mW
-55~150 ℃
Document number: BL/SSSTC019 www.galaxycn.com
Rev.A 1
BL Galaxy Electrical Production specification
Silicon Epitaxial Planar Transistor 2SC1815
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter Symbol Test conditions MIN
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
V
(BR)CBO IC
V
V
I
CBO
I
CEO
I
EBO
h
FE
V
V
IC=0.1mA,IB=0 50 V
(BR)CEO
IC=0.1mA,IC=0 5 V
(BR)EBO
CE(sat)
BE(sat)
=100μA,IE=0 60 V
VCB=60V,IE=0 0.1 μA
VCE=50V,IB=0 0.1 μA
VEB=5V,IC=0 0.1 μA
VCE=6V,IC=2mA 130 400
IC=100mA, IB=10mA
=100mA, IB=10mA
I
C
0.1 0.25 V
1 V
TYP MAX UNIT
Transition frequency
f
T
VCE=10V, IC= 1mA
f=30MHz
80 MHz
CLASSIFICATION OF h
FE(1)
Rank L H
Range 130-200 200-400
Document number: BL/SSSTC019 www.galaxycn.com
Rev.A 2
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