BL Galaxy Electrical Production specification
Silicon Epitaxial Planar Transistor 2SC1654
FEATURES
Pb
z High DC current gain:hFE=130(Typ)
=3V,IC=15mA)
(V
CE
z High voltage.
APPLICATIONS
z Audio frequency general purpose amplifier applications.
SOT-23
ORDERING INFORMATION
Type No. Marking Package Code
2SC1654 N5/N6/N7 SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage
Lead-free
180 V
V
CEO
V
EBO
I
C
P
C
Tj,T
stg
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction and Storage Temperature
160 V
5 V
50 mA
150 mW
-55~150 ℃
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Document number: BL/SSSTC096 www.galaxycn.com
Rev.A 1
BL Galaxy Electrical Production specification
Silicon Epitaxial Planar Transistor 2SC1654
Parameter Symbol Test conditions MIN
Collector-base breakdown voltage
V
(BR)CBO IC
=100μA,IE=0 180 V
TYP MAX UNIT
Collector-emitter breakdown
voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation
voltage
Base-emitter saturation voltage
V
V
I
CBO
I
EBO
h
FE
V
V
IC=1mA,IB=0 160 V
(BR)CEO
(BR)EBO IE
=100μA,IC=0 5 V
VCB=130V,IE=0 0.1 μA
VEB=5V,IC=0 0.1 μA
90
CE(sat)
BE(sat)
VCE=3V,IC=15mA
=3V,IC=5mA
V
CE
IC=50mA, IB=5mA
IC=50mA, IB=5mA
200
70
180
0.1 0.3 V
0.73 1 V
400
Transition frequency
Output capacitance
CLASSIFICATION OF h
f
T
C
ob
FE(1)
VCE=10V, IC= 10mA
VCB=10V, IE=0,f=1kHz
120 MHz
2.3 pF
Range 90-180 135-270 200-400
Marking N5 N6 N7
Document number: BL/SSSTC096 www.galaxycn.com
Rev.A 2
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