BL Galaxy Electrical Production specification
Silicon Epitaxial Planar Transistor 2SC1623
FEATURES
z High DC current gain:hFE=200TYP
=6.0V,IC=1.0mA)
(V
CE
z High Voltage:V
CEO
=50V
Pb
Lead-free
APPLICATIONS
z NPN Silicon Epitaxial Planar Transistor
z Audio frequency general purpose amplifier. SOT-23
ORDERING INFORMATION
Type No. Marking Package Code
2SC1623 L4/L5/L6/L7 SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage
60 V
V
CEO
V
EBO
I
C
P
C
Tj,T
stg
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction and Storage Temperature
50 V
5 V
100 mA
200 mW
-55~150 ℃
Document number: BL/SSSTC0018 www.galaxycn.com
Rev.A 1
BL Galaxy Electrical Production specification
Silicon Epitaxial Planar Transistor 2SC1623
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter Symbol Test conditions MIN
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
V
(BR)CBO IC
V
V
I
CBO
I
EBO
h
FE
V
V
f
T
IC=1mA,IB=0 50 V
(BR)CEO
(BR)EBO IE
CE(sat)
BE(sat)
=100μA,IE=0 60 V
=100μA,IC=0 5 V
VCB=60V,IE=0 0.1 μA
VEB=5V,IC=0 0.1 μA
VCE=6V,IC=1mA 90 200 600
IC=100mA, IB=10mA
IC=100mA, IB=10mA
VCE=6V, IE= 10mA
0.15 0.3 V
0.86 1.0 V
250 MHz
TYP MAX UNIT
Output capacitance
CLASSIFICATION OF h
C
ob
FE(1)
VCB=6V, IE= 0,f=1.0MHz
3.0 MHz
Rank L4 L5 L6 L7
Range 90-180 135-270 200-400 300-600
Marking L4 L5 L6 L7
Document number: BL/SSSTC0018 www.galaxycn.com
Rev.A 2
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