BL Galaxy Electrical Production specification
Silicon PNP epitaxial planer transistor 2SB766
FEATURES
z Large collector power dissipation PC.
z Mini Power type package,allowing
downsizing of the equipment and automatic
insertion through the tape packing and the
magazine packing.
SOT-89
ORDERING INFORMATION
Type No. Marking Package Code
2SB766 AQ/AR/AS SOT-89
Pb
Lead-free
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol Parameter Value Unit
V
CBO
V
CEO
V
EBO
I
C
ICP Peak collector current -1.5 A
P
C
Collector-Base voltage -30 V
Collector-Emitter voltage -25 V
Emitter-Base voltage -5 V
Collector current -1 A
Collector power dissipation 1 W
Tj,T
stg
Junction and storage temperature -55 to+150
℃
Document number: BL/SSSTG047 www.galaxycn.com
Rev.A 1
BL Galaxy Electrical Production specification
Silicon PNP epitaxial planer transistor 2SB766
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter Symbol Test conditions MIN MAX UNIT
Collector-base breakdown voltage V
Collector-emitter breakdown voltage V
Emitter-base breakdown voltage V
Collector cut-off current I
DC current gain h
Collector-emitter saturation voltage V
Base- emitter saturation voltage V
Transition frequency f
Collector Output Capacitance C
CLASSIFICATION H
FE
(BR)CBO IC
(BR)CEO IC
(BR)EBO IE
CBO
FE
CE(sat)
IC=-500mA IB=-50mA -0.85 -1.2 V
BE(sat)
T
obo
=-10μA IE=0 -30 V
=-2mA IB=0 -25 V
=-10μA IC=0 -5 V
VCB=-20V IE=0 -0.1 μA
VCE=-10V IC=-500mA 85 340
IC=-500mA IB=-50mA -0.2 -0.4 V
VCE=-10V,IC=-50mA,
f=200MHz
VCB=-10V f=1.0MHz IE=0 - 20 30 pF
200 MHz
Rank Q R S
Range 85-170 120-240 170-340
Marking AQ AR AS
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Document number: BL/SSSTG047 www.galaxycn.com
Rev.A 2
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