BL Galaxy Electrical Production specification
Silicon Epitaxial Planar Transistor 2SB709A
FEATURES
z High forward current transfer ratio hFE.
z Mini type package, allowing downsizing
of the equipment and automatic insertion
through the tape packing and the magazine
packing.
APPLICATIONS SOT-23
z For general amplification complementary to 2SD601A
ORDERING INFORMATION
Type No. Marking Package Code
2SB709A BQ1,BR1,BS1 SOT-23
Pb
Lead-free
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
Tj,T
stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak collector Current
Collector Current
Collector Dissipation
Junction and Storage Temperature
-45 V
-45 V
-7 V
-200 mA
-100 mA
200 mW
-55~150 ℃
Document number: BL/SSSTC015 www.galaxycn.com
Rev.A 1
BL Galaxy Electrical Production specification
Silicon Epitaxial Planar Transistor 2SB709A
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter Symbol Test conditions MIN
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage V
Collector cut-off current
Collector cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
V
(BR)CBO IC
V
I
CBO
I
CEO
h
FE
V
f
T
IC=-2mA,IB=0 -45 V
(BR)CEO
IE=-10μA,IC=0 -7
(BR)EBO
CE(sat)
=-10μA,IE=0 -45 V
VCB=-20V,IE=0 -0.1 μA
VEB=-10V,IC=0 -100 μA
VCE=-10V,IC=-2mA 160 460
IC=-100mA, IB=-10mA
-0.3 -0.5 V
VCB=-10V, IE=-1mA
f=200MHz
80 MHz
TYP MAX UNIT
V
Collector output capacitance
CLASSIFICATION OF h
Range 160-260 210-340 290-460
Marking BQ1 BR1 BS1
FE(1)
C
ob
VCB=-10V,IE=0,f=1MHz
2.7 pF
Document number: BL/SSSTC015 www.galaxycn.com
Rev.A 2
Loading...