BL Galaxy Electrical Production specification
Silicon Epitaxial Planar Transistor 2SB624
FEATURES
z High DC current gain.hFE: 200TYP
=-1.0V,IC=-100mA)
(V
CE
z Complimentary to the 2SD596.
APPLICATIONS
z Audio frequency amplifier.
z Switching appilication. SOT-23
ORDERING INFORMATION
Type No. Marking Package Code
2SB624 BV1/BV2/BV3/BV4/BV5 SOT-23
Pb
Lead-free
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj,T
stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction and Storage Temperature
-30 V
-25 V
-5 V
-700 mA
200 mW
-55~150 ℃
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Document number: BL/SSSTC014 www.galaxycn.com
Rev.A 1
BL Galaxy Electrical Production specification
Silicon Epitaxial Planar Transistor 2SB624
Parameter Symbol Test conditions MIN
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage V
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
V
(BR)CBO IC
V
I
CBO
I
EBO
h
FE
V
V
f
T
IC=-1mA,IB=0 -25 V
(BR)CEO
IE=-100μA,IC=0 -5
(BR)EBO
CE(sat)
BE(on)
=-100μA,IE=0 -30 V
VCB=-30V,IE=0 -0.1 μA
VEB=-5V,IC=0 -0.1 μA
VCE=-1V,IC=-100mA
=-1V,IC=-700mA
V
CE
IC=-700mA, IB=-70mA
VCE=-6V,IC=10mA
VCE=-6V, IC=-10mA
110
50
-0.25 -0.6 V
-0.7 V
160 MHz
TYP MAX UNIT
V
200 400
Collector output capacitance
C
ob
VCB=-6V,IE=0,f=1MHz
17 pF
CLASSIFICATION OF h
FE(1)
Range 110-180 135-220 170-270 200-320 250-400
Marking BV1 BV2 BV3 BV4 BV5
Document number: BL/SSSTC014 www.galaxycn.com
Rev.A 2
Loading...