BL Galaxy Electrical Production specification
Low V
CE(sat)
Transistor(-20V,-3A) 2SB1424
FEATURES
z Low V
=-2A/-0.1mA).
(I
C/IB
z Excellent DC current gain characterisitics.
z Complementary the 2SD2150.
CE(SAT)
=-0.2V(Typ.)
Pb
Lead-free
APPLICATIONS
z This device is designed as a general purpose amplifier
and switching. SOT-89
ORDERING INFORMATION
Type No. Marking Package Code
2SB1424 AEQ/AER SOT-89
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol Parameter Value Unit
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj,T
stg
Collector-Base Voltage -20 V
Collector-Emitter Voltage -20 V
Emitter-Base Voltage -6 V
Collector Current –DC
-Pulse
Collector power Dissipation 0.5 W
Junction and Storage Temperature -55 to+150
-3
-5
A
℃
Document number: BL/SSSTG035 www.galaxycn.com
Rev.A 1
BL Galaxy Electrical Production specification
Low V
CE(sat)
Transistor(-20V,-3A) 2SB1424
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter Symbol Test conditions MIN MAX UNIT
Collector-base breakdown voltage V
Collector-emitter breakdown voltage V
Emitter-base breakdown voltage V
Collector cut-off current I
Emitter cut-off current I
DC current gain h
Collector-emitter saturation voltage V
Transition frequency f
(BR)CBO IC
(BR)CEO IC
(BR)EBO IE
CBO
EBO
FE
CE(sat)
T
=-50μA IE=0 -20 V
=-1mA IB=0 -20 V
=-50μA IC=0 -6 V
VCB=-20V IE=0 -0.1 μA
VEB=-5V,IC=0 -0.1 μA
VCE=-2V IC=-100μA 120 390
IC=-2A IB=-0.1A -0.5 V
VCE=-2V,IC=-0.5A,
f=100MHz
240 MHz
Output Capacitance C
obo
VCB=-10V f=1MHz IE=0 - 35 pF
CLASSIFICATION H
Rank Q R
Range 120-270 180-390
Marking AEQ AER
FE
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Document number: BL/SSSTG035 www.galaxycn.com
Rev.A 2
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