BL Galaxy Electrical 2SB1260 Schematic [ru]

BL Galaxy Electrical Production specification

Power Transistor(-80V,-1A) 2SB1260

FEATURES

z High breakdown voltage and

high current.

Pb

Lead-free

BV

z Good h

z Low V

z Complements the 2SD1898.

=-80V,IC=-1A

CEO

VLinearity.

FE

CE(sat).

APPLICATIONS

z Epitaxial planar type PNP silicon transistor SOT-89

ORDERING INFORMATION

Type No. Marking Package Code

2SB1206 ZL SOT-89

MAXIMUM RATING @ Ta=25℃ unless otherwise specified

Symbol Parameter Value Unit

V

CBO

V

CEO

V

EBO

I

C

P

D

Tj,T

stg

Collector-Base Voltage -80 V

Collector-Emitter Voltage -80 V

Emitter-Base Voltage -5 V

Collector Current –DC

-Pulse

Total Device Dissipation 500 mW

Junction and Storage Temperature -55 to+150

-1

-2

mA

℃

Document number: BL/SSSTG045 www.galaxycn.com
Rev.A 1

BL Galaxy Electrical Production specification

Power Transistor(-80V,-1A) 2SB1260

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter Symbol Test conditions MIN MAX UNIT

Collector-base breakdown voltage V

Collector-emitter breakdown voltage V

Emitter-base breakdown voltage V

Collector cut-off current I

Emitter cut-off current I

DC current gain h

Collector-emitter saturation voltage V

Transition frequency f

Output Capacitance C

(BR)CBO IC

(BR)CEO IC

(BR)EBO IE

CBO

EBO

FE

CE(sat)

T

obo

=-50μA IE=0 -80 V

=-1mA IB=0 -80 V

=-50μA IC=0 -5 V

VCB=-60V IE=0 -1 μA

VEB=-4V,IC=0 -1 μA

VCE=-3V IC=-100μA 82 390

IC=-500mA IB=-50mA -0.4 V

VCE=-5V,IC=-50mA,

f=30MHz

VCB=-10V f=1.0MHz IE=0 - 25 pF

100 MHz

TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Document number: BL/SSSTG045 www.galaxycn.com
Rev.A 2