BL Galaxy Electrical Production specification
PNP Silicon Epitaxial Planar Transistor 2SB1218A
FEATURES
z High forward current transfer ratio hFE
z Excellent H
z Complements the 2SD1819A.
Linearity.
FE
APPLICATIONS
z For general purpose amplification.
SOT-323
ORDERING INFORMATION
Type No. Marking Package Code
2SB1218A BQ1/BR1/BS1 SOT-323
Pb
Lead-free
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj,T
stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction and Storage Temperature
-45 V
-45 V
-7 V
-200 mA
150 mW
-55~150 ℃
Document number: BL/SSSTF034 www.galaxycn.com
Rev.A 1
BL Galaxy Electrical Production specification
PNP Silicon Epitaxial Planar Transistor 2SB1218A
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V
Collector-emitter breakdown
voltage
Emitter-base breakdown voltage V
Collector cut-off current I
Collector cut-off current I
DC current gain h
Collector-emitter saturation voltage V
Transition frequency f
Collector output capacitance C
CLASSIFICANTION OF h
Rank Q R S
(BR)CBO IC
V
(BR)CEO
(BR)EBO
CBO
CEO
FE
CE(sat)
T
ob
FE
=-10μA,IE=0 -45 V
IC=-2mA,IB=0 -45 V
IE=-10μA,IC=0 -7 V
VCB=-20V,IE=0 -0.1 μA
VCB=-10V,IB=0 -100 μA
VCE=-10V,IC=-2mA 160 460
IC=-100mA, IB=-10mA -0.3 -0.5 V
VCB=-10V, IE=1mA
f=200MHz
VCB=-10V,IE=0,f=1MHz 2.7 pF
80 MHz
Range 160-260 210-340 290-460
marking BQ BR BS
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Document number: BL/SSSTF034 www.galaxycn.com
Rev.A 2
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