BL Galaxy Electrical Production specification
Silicon Epitaxial Planar Transistor 2SB1197
FEATURES
z Small surface mounting type.
z Corredtor peak current(Max.=1000mA)
z Suitable for high packing density.
z Low voltage(Max.=40v)
z High saturation current capability.
z Voltage controlled small signal switch.
APPLICATIONS SOT-23
z Telephone and professional communication equipment.
z Other switching appilications.
ORDERING INFORMATION
Type No. Marking Package Code
2SB1197 AHP,AHQ,AHR SOT-23
Pb
Lead-free
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
C
Tj,T
stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current DC
Peak Collector Current
Peak Base Current
Collector Dissipation
Junction and Storage Temperature
-40 V
-32 V
-5 V
-800 mA
-1 A
-80 mA
200 mW
-65~150 ℃
Document number: BL/SSSTC016 www.galaxycn.com
Rev.A 1
BL Galaxy Electrical Production specification
Silicon Epitaxial Planar Transistor 2SB1197
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter Symbol Test conditions MIN
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage V
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
V
(BR)CBO IC
V
I
CBO
I
EBO
h
FE
V
f
T
IC=-1mA,IB=0 -32 V
(BR)CEO
IE=-50μA,IC=0 -5
(BR)EBO
CE(sat)
=-50μA,IE=0 -40 V
VCB=-20V,IE=0 -0.5 μA
VEB=-4V,IC=0 -0.5 μA
VCE=-3V,IC=-100mA 82 390
IC=-500mA, IB=-50mA
VCE=-5V, IC=-50mA
f=100MHz
-0.5 V
50 MHz
TYP MAX UNIT
V
Collector output capacitance
CLASSIFICATION OF h
Range 82-180 120-270 180-390
Marking P Q R
FE(1)
C
ob
VCB=-10V,IE=0,f=1MHz
30 pF
Document number: BL/SSSTC016 www.galaxycn.com
Rev.A 2
Loading...