BL Galaxy Electrical Production specification
Medium power transistor(-32V,-2A) 2SB1188
FEATURES
z Low V
=-2A/-0.2A).
(I
C/IB
z Complementary the 2SD1766.
CE(SAT)
=-0.5V(Typ.)
APPLICATIONS
z Epitaxial planar type NPN silicon transistor.
ORDERING INFORMATION
Type No. Marking Package Code
2SB1188 BCP/BCQ/BCR SOT-89
Pb
Lead-free
SOT-89
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol Parameter Value Unit
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj,T
stg
Collector-Base Voltage -40 V
Collector-Emitter Voltage -32 V
Emitter-Base Voltage -5 V
Collector Current –DC
-Pulse
Collector power dissipation 500 mW
Junction and Storage Temperature -55 to+150
-2
-3
A
℃
Document number: BL/SSSTG036 www.galaxycn.com
Rev.A 1
BL Galaxy Electrical Production specification
Medium power transistor(-32V,-2A) 2SB1188
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter Symbol Test conditions MIN MAX UNIT
Collector-base breakdown voltage V
Collector-emitter breakdown voltage V
Emitter-base breakdown voltage V
Collector cut-off current I
Emitter cut-off current I
DC current gain h
Collector-emitter saturation voltage V
Transition frequency f
Output Capacitance C
(BR)CBO IC
(BR)CEO IC
(BR)EBO IE
CBO
EBO
FE
CE(sat)
T
obo
=-50μA IE=0 -40 V
=-1mA IB=0 -32 V
=-50μA IC=0 -5 V
VCB=-20V IE=0 -1 μA
VEB=-4V,IC=0 -1 μA
VCE=-3V IC=-0.5A 82 390
IC=-2A IB=-0.2mA -0.5 -0.8 V
VCE=-5V,IC=-0.5A,
f=30MHz
VCB=-10V f=1.0MHz IE=0 50 pF
100 MHz
CLASSIFICATION H
Rank P Q R
FE
Range 82-180 120-270 180-390
Marking BCP BCQ BCR
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Document number: BL/SSSTG036 www.galaxycn.com
Rev.A 2
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