BL Galaxy Electrical Production specification
PNP Epitaxial Planar Silicon Transistors 2SB1119
FEATURES
z Very small size making it easy to provide
High-density,small-size hybrid IC’s.
SOT-89
ORDERING INFORMATION
Type No. Marking Package Code
2SB1119 BB SOT-89
Pb
Lead-free
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol Parameter Value Unit
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj,T
stg
Collector-Base Voltage -25 V
Collector-Emitter Voltage -25 V
Emitter-Base Voltage -5 V
Collector Current –DC
-Pulse
Collector Dissipation 500 mW
Junction and Storage Temperature -55 to+150
-1
-2
mA
℃
Document number: BL/SSSTG043
www.galaxycn.com
Rev.A 1
BL Galaxy Electrical Production specification
PNP Epitaxial Planar Silicon Transistors 2SB1119
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter Symbol Test conditions MIN MAX UNIT
Collector-base breakdown voltage V
Collector-emitter breakdown voltage V
Emitter-base breakdown voltage V
Collector cut-off current I
Emitter cut-off current I
DC current gain h
Collector-emitter saturation voltage V
Base-emitter saturation voltage V
Transition frequency f
Output Capacitance C
(BR)CBO IC
(BR)CEO IC
(BR)EBO IE
CBO
EBO
F
CE(sat)
IC=-500mA IB=-50mA -0.85 -1.2 V
BE(sat)
T
obo
=-10μA IE=0 -25 V
=-1mA IB=0 -25 V
=-10μA IC=0 -5 V
VCB=-20V IE=0 -0.1 μA
VEB=-4V,IC=0 -0.1 μA
VCE=-2V IC=-50mA
V
=-2V IC=-1A
CE
IC=-500mA IB=-50mA -0.1 -0.3 V
VCE=-10V,IC=-50mA, 180 MHz
VCB=-10V f=1.0MHz IE=0 15 pF
100
40
560
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Document number: BL/SSSTG043
www.galaxycn.com
Rev.A 2
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