BL Galaxy Electrical Production specification
PNP Epitaxial Planar Silicon Transistors 2SB1073
FEATURES
z Low collector-emitter saturation
voltage V
CE(sat).
Pb
Lead-free
z Large peak collector current I
z Mini Power type package,allowing downsizing
of the equipment and automatic insertion through
the tape packing and the magazine packing.
CP.
SOT-89
ORDERING INFORMATION
Type No. Marking Package Code
2SB1073 IQ/IR SOT-89
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol Parameter Value Unit
V
CBO
Collector-Base Voltage -30 V
V
CEO
V
EBO
I
C
I
CP
P
C
Tj,T
stg
Collector-Emitter Voltage -20 V
Emitter-Base Voltage -7 V
Collector Current -4 A
Peak collector current -7 A
Collector Dissipation 1 W
Junction and Storage Temperature -55 to+150
℃
Document number: BL/SSSTG076
www.galaxycn.com
Rev.A 1
BL Galaxy Electrical Production specification
PNP Epitaxial Planar Silicon Transistors 2SB1073
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V
Collector-emitter breakdown voltage V
Emitter-base breakdown voltage V
Collector cut-off current I
Emitter cut-off current I
DC current gain h
Collector-emitter saturation voltage V
Transition frequency f
Output Capacitance C
(BR)CBO IC
(BR)CEO IC
(BR)EBO IE
CBO
EBO
F
CE(sat)
T
obo
=-10μA IE=0 -30 V
=-1mA IB=0 -20 V
=-10μA IC=0 -7 V
VCB=-30V IE=0 -0.1 μA
VEB=-7V,IC=0 -0.1 μA
VCE=-2V IC=-2A 120 315
IC=-3A IB=-0.1A -0.6 -1.0 V
VCB=-6V,IE=-50mA,
f=200MHZ
VCB=-20V f=1.0MHz IE=0 40 pF
120 MHz
CLASSIFICATION OF hFE
Rank Q R
Range 120-205 180-315
Marking IQ IR
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Document number: BL/SSSTG076
www.galaxycn.com
Rev.A 2
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