BL Galaxy Electrical Production specification
Silicon Epitaxial Planar Transistor 2SA812
FEATURES
z Commplementary to 2SC1623.
z High DC current gain:h
=-6.0V,IC=-1.0mA)
(V
CE
=200typ.
FE
Pb
Lead-free
z High Voltage: V
CEO
=-50V
APPLICATIONS
z Audio frequency, general purpose amplifier SOT-23
ORDERING INFORMATION
Type No. Marking Package Code
2SA812 M4/M5/M6/M7 SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol Parameter Value Units
V
V
CBO
CEO
Collector-Base Voltage
Collector-Emitter Voltage
-60 V
-50 V
V
EBO
I
C
P
C
Tj,T
stg
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction and Storage Temperature
-5 V
-100 mA
200 mW
-55~150 ℃
Document number: BL/SSSTC010 www.galaxycn.com
Rev.A 1
BL Galaxy Electrical Production specification
Silicon Epitaxial Planar Transistor 2SA812
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter Symbol Test conditions MIN
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage V
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
V
(BR)CBO IC
V
I
CBO
I
EBO
h
FE
V
V
IC=-1mA,IB=0 -50 V
(BR)CEO
IE=-100μA,IC=0 -5
(BR)EBO
CE(sat)
BE
=-100μA,IE=0 -60 V
VCB=-60V,IE=0 -0.1 μA
VEB=-5V,IC=0 -0.1 μA
VCE=-6V,IC=-1mA 90 200 600
IC=-100mA, IB=-10mA
IC=-1mA, VCE=-6V
-0.3 V
-0.58 -0.68 V
TYP MAX UNIT
V
Transition frequency
Collector output capacitance
f
T
C
ob
VCE=-6V, IC=-10mA
VCB=-10V,IE=0,f=1MHz
180 MHz
4.5 pF
CLASSIFICATION OF h
FE(1)
Range M4 M5 M6 M7
Marking 90-180 135-270 200-400 300-600
Document number: BL/SSSTC010 www.galaxycn.com
Rev.A 2
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