BL Galaxy Electrical Production specification
Plastic-Encapsulate Transistors 2SA1832
FEATURES
z High voltage and high current
z Excellent h
linearity
FE
Pb
Lead-free
z High h
z Complementary to 2sc4738
z Small package
FE
SOT-523
ORDERING INFORMATION
Type No. Marking Package Code
2SA1832 SO/SY/SG SOT-523
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol Parameter Limits Unit
V
CBO
collector-base voltage -50 V
V
CEO
V
EBO
I
C
I
B
PC Collector power dissipation 100 mW
T
stg
T
j
collector-emitter voltage -50 V
emitter-base voltage -5 V
collector current -150 mA
Base current -30 mA
storage temperature range -55 to +125 °C
junction temperature 125 °C
Document number: BL/SSSTH026 www.galaxycn.com
Rev.A 1
BL Galaxy Electrical Production specification
Plastic-Encapsulate Transistors 2SA1832
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. Typ. MAX. UNIT
V
(BR)CBO
V
(BR)CEO
V
(BR)BEO
I
CBO
I
EBO
h
FE(1)
V
CE(sat)
C
obo
f
T
CLASSIFICATION OF h
Collector-base breakown voltage IC=-100μA,IE=0 -50
Collector- emitter breakown voltage IC=-1μA,IB=0 -50
Emitter-base breakown voltage IE=-100μA,IC=0 -5
Collector cut-off current IE=0,VCB=-50V -0.1 μA
Emitter cut-off current IC=0,VEB=-5V -0.1 μA
DC current gain VCE=-6V,IC=-2mA 70 400
collector-emitter saturation voltage IC=-100mA,IB=-10mA -0.1 -0.3 V
Output capacitance IE=0,VCB=-10V,f=1MHz 4 7 pF
transition frequency IC=-1mA,VCE =-10V, 80 MHz
FE(1)
Rang 70-140 120-240 200-400
Marking SO SY SG
Document number: BL/SSSTH026 www.galaxycn.com
Rev.A 2
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