BL Galaxy Electrical Production specification
PNP Silicon Epitaxial Planar Transistor 2SA1797
FEATURES
Pb
z Low V
(I
C/IB
z Excellent DC current gain characteristics.
z Power dissipation P
APPLICATIONS
z Low frequency transistor.
ORDERING INFORMATION
Type No. Marking Package Code
2SA1797 AGP/AGQ SOT-89
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol Parameter Value Units
=-0.35V(Max.)
CE(sat)
=-1A/-0.5A).
:0.5W.
D
Lead-free
SOT-89
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj,T
stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current DC
Pulse
Collector Dissipation
Junction and Storage Temperature
-55 V
-55 V
-6 V
-2
A
-5
500 mW
-55~150 ℃
Document number: BL/SSSTG027 www.galaxycn.com
Rev.A 1
BL Galaxy Electrical Production specification
PNP Silicon Epitaxial Planar Transistor 2SA1797
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter Symbol Test conditions MIN
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage V
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
V
(BR)CBO IC
V
I
CBO
I
EBO
h
FE
V
f
T
C
IC=-1.0mA,IB=0 -50 V
(BR)CEO
IE=-50μA,IC=0 -6
(BR)EBO
CE(sat)
ob
=-50μA,IE=0 -50 V
VCB=-50V,IB=0 -0.1 μA
VEB=-5V,IC=0 -0.1 μA
VCE=-2V,IC=-500mA 82 270
IC=-1A, IB=-50mA
VCE=-2V, IE=-500mA
f=100MHz
VCB=-10V,IE=0,f=1MHz
-0.15 -0.35 V
200 MHz
36 pF
TYP MAX UNIT
V
CLASSIFICATION OF hFE
Rank P Q
Range 82-180 120-270
Marking AGP AGQ
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Document number: BL/SSSTG027 www.galaxycn.com
Rev.A 2
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