BL Galaxy Electrical Production specification
PNP General Purpose Transistor 2SA1774
FEATURES
z Excellent hFE linearity.
z Complementary NPN type available
(2SC4617).
APPLICATIONS
z Epitaxial planar type.
z PNP silicon transistor.
ORDERING INFORMATION SOT-523
Type No. Marking Package Code
2SA1774 FQ/FR/FS SOT-523
Pb
Lead-free
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol Parameter Limits Unit
V
V
V
I
P
R
T
T
CBO
CEO
EBO
C
d
θJA
stg
j
collector-base voltage -60 V
collector-emitter voltage -50 V
emitter-base voltage -6 V
collector current -150 mA
Power dissipation 150 mW
Thermal resistance, junction to Ambient 833 °C/W
storage temperature range -55 to +150 °C
junction temperature 150 °C
Document number: BL/SSSTH017 www.galaxycn.com
Rev.A 1
BL Galaxy Electrical Production specification
PNP General Purpose Transistor 2SA1774
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. Typ. MAX. UNIT
V
(BR)CBO
V
(BR)CEO
V
(BR)BEO
I
CBO
I
EBO
h
FE
V
CE(sat)
C
obo
f
T
Collector-base breakown voltage IC=-50μA,IE=0 -60
Collector- emitter breakown voltage IC=-1μA,IB=0 -50
Emitter-base breakown voltage IE=-50μA,IC=0 -6
Collector cut-off current IE=0,VCB=-60V -0.1 μA
Emitter cut-off current IC=0,VEB=-6V -0.1 μA
DC current gain VCE=-6V,IC=-1mA 120 560
collector-emitter saturation voltage IC=-50mA,IB=-5mA -0.5 V
Output capacitance IE=0,VCB=-12V,f=1MHz 4.0 5.0 pF
I
=-2mA,VCE =-12V,
transition frequency
C
f=30MHz
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
140 MHz
Document number: BL/SSSTH017 www.galaxycn.com
Rev.A 2
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