BL Galaxy Electrical Production specification
Plastic-Encapsulated Transistor 2SA1664
FEATURES
Pb
z Complementary to 2SC2884
ORDERING INFORMATION
Type No. Marking Package Code
2SA1664 RO/RY SOT-89
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol Parameter Value Units
Lead-free
SOT-89
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj,T
stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction and Storage Temperature
-35 V
-30 V
-5 V
-0.8 A
500 mW
-55~150 ℃
Document number: BL/SSSTG075 www.galaxycn.com
Rev.A 1
BL Galaxy Electrical Production specification
Plastic-Encapsulated Transistor 2SA1664
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter Symbol Test conditions MIN
Collector-base breakdown voltage
Collector- emitter breakdown voltage
Emitter- base breakdown voltage
Collector cut-off current
Emitter cut-off current
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
IC=-1mA,IE=0 -35 V
IC=-10mA,IB=0 -30 V
IE=-1mA, IC=0 -5 V
VCB=-35V,IE=0 -0.1 μA
VEB=-5V,IC=0 -0.1 μA
TYP MAX UNIT
VCE=-1V,IC=-100mA 100 320
DC current gain
Collector-emitter saturation voltage
Base-emitter
Transition frequency
Collector output capacitance
h
FE
V
CE(sat)
V
BE
f
T
C
ob
=-1V,IC=-700mA 35
V
CE
IC=-500mA,IB=-20mA
=-1V,IC=-10mA
V
CE
VCE=-5V, IC=-10mA
VCB=-10V,IE=0,f=1MHz
-0.7 V
-0.5 -0.8 V
120 MHz
19 pF
CLASSIFICATION OF hFE
Rank O Y
Range 100-200 160-320
Marking RO RY
Document number: BL/SSSTG075 www.galaxycn.com
Rev.A 2
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